參數(shù)資料
型號(hào): APTGT100DH120TG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 140 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, MODULE-14
文件頁數(shù): 4/5頁
文件大?。?/td> 282K
代理商: APTGT100DH120TG
APTGT100DH120TG
A
P
T
G
T
100
D
H
120
T
G
R
ev
1
O
ct
obe
r,
2005
APT website – http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
01
23
4
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
50
100
150
200
01
234
VCE (V)
I C
(A
)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
175
200
56789
10
11
12
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
5
10
15
20
25
0
25
50
75 100 125 150 175 200
IC (A)
E
(
m
J
)
VCE = 600V
VGE = 15V
RG = 3.9
TJ = 125°C
Eon
Eoff
Er
0
5
10
15
20
25
0
5
10
15
20
25
Gate Resistance (ohms)
E
(
m
J
)
VCE = 600V
VGE =15V
IC = 100A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
40
80
120
160
200
240
0
300
600
900
1200
1500
VCE (V)
I C
(A
)
VGE=15V
TJ=125°C
RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
p
e
da
nc
e
(
°C
/W
)
IGBT
相關(guān)PDF資料
PDF描述
APTGT100DH60T3G 75 A, 600 V, N-CHANNEL IGBT
APTGT100SK120D1G 150 A, 1200 V, N-CHANNEL IGBT
APTGT100SK170D1 200 A, 1700 V, N-CHANNEL IGBT
APTGT100SK170D1 200 A, 1700 V, N-CHANNEL IGBT
APTGT100SK60T1G 150 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT100DH170 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT100DH170G 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT100DH60T3G 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT100DH60TG 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT100DSK60T3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Buck chopper Trench + Field Stop IGBT Power Module