參數(shù)資料
型號： APTGT100SK170D1
廠商： Advanced Power Technology Ltd.
英文描述： Buck chopper Trench IGBT Power Module
中文描述： 降壓斬波溝道IGBT功率模塊
文件頁數(shù)： 2/3頁
文件大小： 154K
代理商： APTGT100SK170D1
APTGT100SK170D1
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 4mA
V
GE
= 0V, V
CE
= 1700V
V
GE
= 15V
I
C
= 100A
V
GE
= V
CE
, I
C
= 4 mA
V
GE
= 20V, V
CE
= 0V
Min
1700
5.2
Typ
2.0
2.4
5.8
Max
3
2.4
6.4
200
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15
Min
Typ
8.5
0.3
250
100
850
120
300
100
1000
200
32
Max
Unit
nF
ns
ns
mJ
Test Conditions
I
F
= 100A
V
GE
= 0V
I
F
= 100A
V
R
= 900V
di/dt =900A/μs
I
F
= 100A
V
= 900V
di/dt =900A/μs T
j
= 125°C
Min
Typ
1.8
1.9
12
Max
2.2
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
25
mJ
25
Q
rr
Reverse Recovery Charge
43
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.18
0.3
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
3500
V
T
J
T
STG
T
C
-40
-40
-40
2
3
150
125
125
3.5
5
180
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
相關(guān)PDF資料
PDF描述
APTGT100X120E3 3 Phase bridge Trench IGBT Power Module
APTGT150A120 Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT150A170 Phase leg Trench + Field Stop IGBT Power Module
APTGT150DH170 Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT150DU120T Dual common source Fast Trench + Field Stop IGBT Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT100SK170D1G 功能描述:IGBT 1700V 200A 695W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT100SK170DG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT100SK170T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module
APTGT100SK170TG 功能描述:IGBT 1700V 150A 560W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT100SK60T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*