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參數(shù)資料
| 型號(hào)： | APTGT150A120 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Fast Trench + Field Stop IGBT Power Module |
| 中文描述： | 相腳快速戴場站IGBT功率模塊 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 278K |
| 代理商： | APTGT150A120 |
APTGT150A120
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 150A
V
GE
= V
CE
, I
C
= 3 mA
V
GE
= 20V, V
CE
= 0V
Min
5.0
Typ
1.7
2.0
5.8
Max
1
2.1
6.5
600
Unit
mA
T
j
= 25°C
T
j
= 125°C
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 150A
R
G
= 2.2
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 150A
R
G
= 2.2
Min
Typ
10.7
0.56
0.48
280
40
450
75
290
45
550
90
14
16
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
1200
Typ
150
1.6
1.6
170
280
15
29
Max
250
500
2.1
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
A
V
F
Diode Forward Voltage
I
F
= 150A
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 150A
V
R
= 600V
di/dt =3000A/μs
μC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT150A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 220A SP2 |
| APTGT150A120D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT150A120D1G | 功能描述:IGBT MODULE TRENCH PHASE LEG D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150A120D3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT150A120D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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