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參數(shù)資料
| 型號： | APTGT150SK170D3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Buck chopper Trench IGBT Power Module |
| 中文描述： | 降壓斬波溝道IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 170K |
| 代理商： | APTGT150SK170D3 |
APTGT150SK170D3
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 6mA
V
GE
= 0V, V
CE
= 1700V
V
GE
= 15V
I
C
= 150A
V
GE
= V
CE
, I
C
= 6mA
V
GE
= 20V, V
CE
= 0V
Min
1700
5.2
Typ
2.0
2.4
5.8
Max
10
2.4
6.4
800
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 150A
R
G
= 9.1
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 150A
R
G
= 9.1
Min
Typ
12
0.45
200
100
750
100
230
100
900
200
50
Max
Unit
nF
ns
ns
mJ
Test Conditions
I
F
= 150A
V
GE
= 0V
I
F
= 150A
V
R
= 900V
di/dt =990A/μs
I
F
= 150A
V
= 900V
di/dt =990A/μs T
j
= 125°C
Min
Typ
1.8
1.9
20
Max
2.2
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
35
mJ
40
Q
rr
Reverse Recovery Charge
65
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.12
0.21
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
V
T
J
T
STG
T
C
-40
-40
-40
3
3
150
125
125
5
5
380
°C
For terminals
To Heatsink
M6
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
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| APTGT150SK60T | Buck chopper Trench + Field Stop IGBT Power Module |
| APTGT150TA60P | Triple phase leg Trench + Field Stop IGBT Power Module |
| APTGT150TDU60P | Triple Dual Common Source Trench + Field Stop IGBT Power Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT150SK170D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150SK170G | 功能描述:IGBT 1700V 250A 890W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150SK170XG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150SK60T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module |
| APTGT150SK60T1G | 功能描述:IGBT 600V 225A 480W SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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