參數(shù)資料
型號: APTGT20TL601G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 32 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 6/6頁
文件大?。?/td> 216K
代理商: APTGT20TL601G
APTGT20TL601G
APT
G
T
20T
L
601G
Rev0
M
ar
ch,
2009
www.microsemi.com
6- 6
CR1 to CR6 Typical performance curve
Energy losses vs Collector Current
0
0.2
0.4
0.6
0.8
010
20
30
40
IF (A)
E
(m
J)
VCE = 300V
RG = 12
TJ = 150°C
0
0.125
0.25
0.375
0.5
10
30
50
70
Gate Resistance (ohms)
E
(m
J)
VCE = 300V
IC = 20A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Forward Characteristic of diode
TJ=25°C
TJ=150°C
0
5
10
15
20
25
30
35
40
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I F
(A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.5
1
1.5
2
2.5
3
3.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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