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參數(shù)資料
| 型號(hào)： | APTM100A23ST |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-10 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 311K |
| 代理商： | APTM100A23ST |
APTM10DSKM09T3
A
P
T
M
10D
SK
M
09T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
100
200
300
400
500
600
0
4
8
12
16
20
24
28
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
Low Voltage Output Characteristics
VGS=15V, 10V & 9V
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
0
255075
100
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
t
o
S
o
u
rce
O
N
R
e
si
st
an
ce
Normalized to
VGS=10V @ 69.5A
0
20
40
60
80
100
120
140
160
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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