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參數(shù)資料
| 型號(hào)： | APTM100A23ST |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-10 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 311K |
| 代理商： | APTM100A23ST |
APTM100A23ST
A
P
T
M
100A
23S
T
–
R
ev
2
J
une
,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
1000
V
VGS = 0V,VDS= 1000V
Tj = 25°C
150
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 18A
230
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
8700
Coss
Output Capacitance
1430
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
240
pF
Qg
Total gate Charge
308
Qgs
Gate – Source Charge
52
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 36A
194
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
121
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 36A
RG = 2.5
35
ns
Eon
Turn-on Switching Energy
1278
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 36A, RG = 2.5
760
J
Eon
Turn-on Switching Energy
2092
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 36A, RG = 2.5
902
J
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60A
1.1
1.15
IF = 120A
1.4
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
48
ns
Tj = 25°C
66
Qrr
Reverse Recovery Charge
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
300
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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