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參數(shù)資料
| 型號(hào)： | APTM100A40FT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 1000 V, 0.48 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | APTM100A40FT1G |
APTM100A40FT1G
APT
M
100A40FT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
4 – 5
Typical Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=10V
Low Voltage Output Characteristics
4.5V
5V
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
TJ=125°C
VGS=6, 7, 8 &9V
Normalized RDSon vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
Drai
n
to
S
o
u
rce
ON
resi
stance
VGS=10V
ID=18A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
5
10
15
20
25
30
35
01234
567
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5
duty cycle
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C,
Cap
a
c
itan
ce
(p
F)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
0
40
80
120 160 200 240 280 320
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sour
c
e
Volt
a
g
e
VGS=10V
ID=18A
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