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參數(shù)資料
| 型號(hào)： | APTM100DU18T |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 312K |
| 代理商： | APTM100DU18T |
APTM100DU18T
AP
T
M
10
0DU1
8T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
S
Q1
Q2
D2
S2
S1
G1
G2
D1
NTC1
NTC2
D2
NTC2
D2
S1
D1
NTC1
S2
G2
S2
G2
S
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
43
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
172
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
180
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 180m max @ Tj = 25°C
ID = 43A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Dual Common Source
MOSFET Power Module
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| APTM100DU18T | 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H18F | 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H18F | 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H35FT | 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H35FT | 22 A, 1000 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100DU18TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100DUM90 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
| APTM100DUM90G | 功能描述:MOSFET MOD DUAL COMMON SRC SP6 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100H18F | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM100H18FG | 功能描述:MOSFET MOD FULL BRIDGE 1000V SP6 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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