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參數(shù)資料
| 型號(hào)： | APTM100DU18T |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 312K |
| 代理商： | APTM100DU18T |
APTM100DU18T
AP
T
M
10
0DU1
8T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
40
80
120
160
200
10
30
50
70
90
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=670V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
10
30
50
70
90
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=670V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
10
30
50
70
90
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(m
J)
VDS=670V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
6
7
0
5
10
15
20
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=670V
ID=43A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
15
20
25
30
35
40
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=2.5
TJ=125°C
Tc=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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