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參數(shù)資料
| 型號(hào)： | APTM100H18F |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 308K |
| 代理商： | APTM100H18F |
APTM100H18F
A
P
T
M
100H
18F
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
5 – 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S,
D
rai
n
to
S
o
u
rce
B
reak
d
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
ra
in
t
o
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID=21.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Th
re
shol
d
V
o
lt
ag
e
(N
o
rma
li
ze
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
100
1000
10000
100000
0
102030
40
50
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
14
0
100
200
300
400
500
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=43A
TJ=25°C
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| APTM100H18F | 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM100H45SCT | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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