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參數(shù)資料
| 型號： | APTM100H18F |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 308K |
| 代理商： | APTM100H18F |
APTM100H18F
A
P
T
M
100H
18F
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
20
40
60
80
100
120
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15, 10&8V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
140
160
012345
6789
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
20406080
100
120
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
to
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 21.5A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100H18FG | 功能描述:MOSFET MOD FULL BRIDGE 1000V SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100H35FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM100H35FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM100H35FT3G | 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100H35FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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