參數(shù)資料
型號(hào): APTM100SK18T
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 43 A, 1000 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-12
文件頁數(shù): 3/6頁
文件大?。?/td> 314K
代理商: APTM100SK18T
AP4407GS/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
50
100
150
200
250
01234
5678
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
10
15
20
25
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D = -16 A
T C =25
0
50
100
150
01234
5678
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
T C =150
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =-24A
V G =-10V
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V)
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