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參數(shù)資料
| 型號： | APTM100VDA35T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.42 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 235K |
| 代理商： | APTM100VDA35T3G |
APTM100VDA35T3G
APTM100VDA35
T
3G–
Rev
0
Septem
ber,
2009
www.microsemi.com
1 – 7
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
22
ID
Continuous Drain Current
Tc = 80°C
17
IDM
Pulsed Drain current
88
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
420
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 350mΩ typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
RoHS Compliant
Dual Boost chopper
MOSFET Power Module
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