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參數(shù)資料
| 型號(hào)： | APTM10AM05FT |
| 元件分類： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | APTM10AM05FT |
APTGT100A120T
A
P
T
G
T
100
A
120T
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
01
23
4
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
50
100
150
200
01
234
VCE (V)
I C
(A
)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
175
200
56789
10
11
12
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
5
10
15
20
25
0
25
50
75 100 125 150 175 200
IC (A)
E
(
m
J
)
VCE = 600V
VGE = 15V
RG = 3.9
TJ = 125°C
Eon
Eoff
Er
0
5
10
15
20
25
0
5
10
15
20
25
Gate Resistance (ohms)
E
(
m
J
)
VCE = 600V
VGE =15V
IC = 100A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
40
80
120
160
200
240
0
300
600
900
1200
1500
VCE (V)
I C
(A
)
VGE=15V
TJ=125°C
RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
p
e
da
nc
e
(
°C
/W
)
IGBT
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PDF描述 |
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| APTM10AM05FT | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DAM02 | 495 A, 100 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DAM02 | 495 A, 100 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DAM05T | 278 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DAM05T | 278 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
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| APTM10DAM02G | 功能描述:MOSFET N-CH 100V 495A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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