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參數(shù)資料
| 型號(hào)： | APTM10DDAM19T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 100 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | APTM10DDAM19T3 |
APTGT100DDA60T3
A
P
T
G
T
100
D
A
60T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 100A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1.5 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
6100
Coes
Output Capacitance
390
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
190
pF
Td(on)
Turn-on Delay Time
115
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
225
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 10
55
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
300
Tf
Fall Time
70
ns
Eon
Turn on Energy
1.8
Eoff
Turn off Energy
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 10
3.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
100
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
4.7
Qrr
Reverse Recovery Charge
IF = 100A
VR = 300V
di/dt =2000A/s
Tj = 150°C
9.9
C
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