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參數(shù)資料
| 型號(hào)： | APTM10HM19FT3 |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 315K |
| 代理商： | APTM10HM19FT3 |
APTM10HM19FT3
A
P
T
M
10H
M
19F
T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
50
100
150
200
250
300
0
4
8
12
16
20
24
28
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
Low Voltage Output Characteristics
VGS=15V, 10V & 9V
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
125
0123
45678
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
1
1.2
1.4
1.6
0
50
100
150
200
250
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
t
o
S
o
u
rce
O
N
R
e
si
st
an
ce
Normalized to
VGS=10V @ 35A
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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| APTM10HM19FT3 | 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM10SKM02G | 功能描述:MOSFET N-CH 100V 495A SP6 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM10SKM05T | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Buck chopper MOSFET Power Module |
| APTM10SKM05TG | 功能描述:MOSFET N-CH 100V 278A SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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