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參數(shù)資料
| 型號： | APTM10HM19FT3 |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 315K |
| 代理商： | APTM10HM19FT3 |
APTM10HM19FT3
A
P
T
M
10H
M
19F
T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 35A
19
20
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5100
Coss
Output Capacitance
1900
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
800
pF
Qg
Total gate Charge
200
Qgs
Gate – Source Charge
40
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 70A
92
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
95
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 70A
RG = 5
125
ns
Eon
Turn-on Switching Energy
276
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 70A, RG = 5
302
J
Eon
Turn-on Switching Energy
304
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 70A, RG = 5
320
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
70
IS
Continuous Source current
(Body diode)
Tc = 80°C
50
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 70A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
Tj = 25°C
200
trr
Reverse Recovery Time
IS = -70A
diS/dt = 100A/s
Tj = 125°C
350
ns
Tj = 25°C
0.5
Qrr
Reverse Recovery Charge
IS = -70A
diS/dt = 100A/s
Tj = 125°C
1
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 70A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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