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參數(shù)資料
| 型號(hào)： | APTM10UM02FA |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 570 A, 100 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | APTM10UM02FA |
APTM10UM02FA
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M
ay,
2005
APT website – http://www.advancedpower.com
1 - 6
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Absolute maximum ratings
* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
570 *
ID
Continuous Drain Current
Tc = 80°C
429
IDM
Pulsed Drain current
1900
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
2.5
m
PD
Maximum Power Dissipation
Tc = 25°C
1660
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 2.25m typ @ Tj = 25°C
ID = 570A* @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Fast intrinsic diode
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single Switch
MOSFET Power Module
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