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參數(shù)資料
| 型號： | APTM120A15F |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 1200 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 302K |
| 代理商： | APTM120A15F |
APTM120A15F
A
P
T
M
120A
15F
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
180
20
40
60
80
100
120
140
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
20
40
60
80
100
120
140
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
12
20
40
60
80
100
120
140
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(m
J)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
2
4
6
8
10
12
14
0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=60A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
5
1525
354555
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=1.2
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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