- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36740 > APTM120A20D 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM120A20D |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 299K |
| 代理商： | APTM120A20D |
APTM120A20D
A
P
T
M
120U
20D
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1.5mA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
1.5
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
6
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25A
200
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±450
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
15.2
Coss
Output Capacitance
2.2
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
600
Qgs
Gate – Source Charge
84
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 50A
390
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
68
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 50A
RG =0.8
36
ns
Eon
Turn-on Switching Energy
2.79
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8
0.6
mJ
Eon
Turn-on Switching Energy
5.6
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8
0.81
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
120
A
IF = 120A
2
2.5
IF = 2400A
2.3
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
IF = 120A
VR = 800V
di/dt = 400A/s
Tj = 125°C
470
ns
Tj = 25°C
2.4
Qrr
Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt = 400A/s
Tj = 125°C
8
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM120A20D | 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120A29FT | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120A29FT | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120A65FT1G | 16 A, 1200 V, 0.78 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DA56T1G | 18 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120A20DG | 功能描述:MOSFET MOD PHASE LEG SER DIO SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120A20SG | 功能描述:MOSFET MOD PHASE LEG SER/PAR SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120A29FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase Leg MOSFET Power Module |
| APTM120A29FTG | 功能描述:MOSFET MODULE PHASE LEG SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120A65FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。