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參數(shù)資料
| 型號： | APTM120A65FT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 1200 V, 0.78 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | APTM120A65FT1G |
APTM120A65FT1G
APT
M
120A65FT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
5 – 5
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
VSD, Source to Drain Voltage (V)
I SD
,Reverse
Drai
n
C
u
rren
t(A)
Drain Current vs Source to Drain Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
erm
a
lI
m
ped
a
n
ce
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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