參數(shù)資料
型號: APTM120DA30T1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 2/5頁
文件大小: 144K
代理商: APTM120DA30T1G
APTM120DA30T1G
APT
M
120DA30T1G
Rev
0
Decem
ber,
2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VDS =1200V
VGS = 0V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25A
300
360
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14560
Coss
Output Capacitance
1340
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
172
pF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
90
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 25A
265
nC
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
315
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 25A
RG = 2.2Ω
90
ns
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
60
A
IF = 60A
2.5
3
IF = 120A
3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
560
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/s
Tj = 125°C
2890
nC
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Transistor
0.19
RthJC
Junction to Case Thermal Resistance
Diode
0.9
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque
Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
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