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參數(shù)資料
| 型號： | APTM120H57FT |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 315K |
| 代理商： | APTM120H57FT |
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6/7
AP4513GH-A
0
10
20
30
01
234
56
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
- 10V
- 7.0V
- 5.0V
- 4.5V
V G = - 3.0V
0
10
20
30
01
23
45
6
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
- 10V
- 7.0V
- 5.0V
- 4.5V
V G = - 3.0V
50
60
70
80
90
100
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =-3 A
T C =25
o C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =-5 A
V G = - 10V
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120H57FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM120H57FT3G | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM120H57FTG | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM120H65FT3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Full bridge MOSFET Power Module |
| APTM120H80FT3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Full bridge MOSFET Power Module |
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