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參數(shù)資料
| 型號(hào)： | APTM120SK15 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 1200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 303K |
| 代理商： | APTM120SK15 |
APTM120SK15
A
P
T
M
120S
K
15
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1mA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
400
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 30A
150
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±250
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
20.6
Coss
Output Capacitance
3.08
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.52
nF
Qg
Total gate Charge
748
Qgs
Gate – Source Charge
96
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 60A
480
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 60A
RG = 1.2
45
ns
Eon
Turn-on Switching Energy
3.96
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 60A, RG = 1.2
2.74
mJ
Eon
Turn-on Switching Energy
6.26
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 60A, RG = 1.2
3.43
mJ
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
2
2.5
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
IF = 60A
VR = 800V
di/dt = 200A/s
Tj = 125°C
470
ns
Tj = 25°C
1200
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt = 200A/s
Tj = 125°C
4000
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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