參數(shù)資料
型號: APTM120TDU57PG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 17 A, 1200 V, 0.57 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-21
文件頁數(shù): 2/6頁
文件大?。?/td> 290K
代理商: APTM120TDU57PG
APTM120TDU57PG
A
P
T
M
120T
D
U
57P
G
R
ev
1
J
ul
y,
2006
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 1200V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 8.5A
570
684
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5155
Coss
Output Capacitance
770
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
130
pF
Qg
Total gate Charge
187
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 17A
120
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 17A
RG = 5
45
ns
Eon
Turn-on Switching Energy
990
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5
685
J
Eon
Turn-on Switching Energy
1565
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5
857
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
17
IS
Continuous Source current
(Body diode)
Tc = 80°C
13
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 17A
1.3
V
dv/dt
Peak Diode Recovery
10
V/ns
trr
Reverse Recovery Time
Tj = 25°C
1291
ns
Qrr
Reverse Recovery Charge
IS = - 17A
VR = 600V
diS/dt = 100A/s
Tj = 25°C
29
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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