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參數(shù)資料
| 型號(hào)： | APTM120U100D-A1N |
| 元件分類： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 310K |
| 代理商： | APTM120U100D-A1N |
APTM120U100D-AlN
A
P
T
M
120U
100D
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(
°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4.5V
5V
5.5V
6V
7V
0
40
80
120
160
200
240
280
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
40
80
120
160
200
240
280
320
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
40
80
120
160
200
240
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
to
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 58A
0
20
40
60
80
100
120
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120U100D-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10DAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120U10DAG_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10SA | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM120U10SAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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