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參數(shù)資料
| 型號(hào)： | APTM20AM04F |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 372 A, 200 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 284K |
| 代理商： | APTM20AM04F |
APTM20AM04F
A
PT
M
20A
M
04F
–R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 6
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
372
ID
Continuous Drain Current
Tc = 80°C
278
IDM
Pulsed Drain current
1488
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
4
m
W
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 200V
RDSon = 4m
W max @ Tj = 25°C
ID = 372A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
MOSFET Power Module
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| APTM20AM10FT | 175 A, 200 V, 0.012 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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