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參數(shù)資料
| 型號(hào)： | APTM20AM05FTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-15 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 135K |
| 代理商： | APTM20AM05FTG |
APTM20AM05FTG
APT
M
20AM
05FTG
–
Rev2
Januar
y,
2009
wwwmicrosemi.com
2- 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 200V
Tj = 25°C
1000
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
2500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 166.5A
5
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 8mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±15 V, VDS = 0V
±250
nA
R
Gate Source input impedance
10
k
Ω
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
40.8
Coss
Output Capacitance
9.1
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
3.1
nF
Qg
Total gate Charge
1184
Qgs
Gate – Source Charge
376
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 333A
600
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
50
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 100V
ID = 333A
RG = 0.22 Ω
10
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
333
IS
Continuous Source current
(Body diode)
Tc = 80°C
249
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 333A
1.3
V
dv/dt
Peak Diode Recovery
8
V/ns
Tj = 25°C
240
trr
Reverse Recovery Time
IS = - 333A
VR = 100V
diS/dt = 800A/s
Tj = 125°C
420
ns
Tj = 25°C
8
Qrr
Reverse Recovery Charge
IS = - 333A
VR = 100V
diS/dt = 800A/s
Tj = 125°C
16
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 333A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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