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參數(shù)資料
| 型號(hào)： | APTM20DAM04 |
| 元件分類： | JFETs |
| 英文描述： | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | APTM20DAM04 |
APTM20DAM04
A
PT
M
20D
A
M
04
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 186A
4
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.9
Coss
Output Capacitance
9.32
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.58
nF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
212
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 372A
268
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 372A
RG = 1.2
W
116
ns
Eon
Turn-on Switching Energy
u
3396
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2
3716
J
Eon
Turn-on Switching Energy
u
3744
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 372A, RG = 1.2
3944
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 90°C
300
A
IF = 300A
1
1.1
IF = 600A
1.4
VF
Diode Forward Voltage
IF = 300A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
IF = 300A
VR = 133V
di/dt = 600A/s
Tj = 125°C
110
ns
Tj = 25°C
600
Qrr
Reverse Recovery Charge
IF = 300A
VR = 133V
di/dt = 600A/s
Tj = 125°C
2520
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
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