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參數(shù)資料
| 型號： | APTM50AM17F |
| 元件分類： | JFETs |
| 英文描述： | 180 A, 500 V, 0.017 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 286K |
| 代理商： | APTM50AM17F |
APTM50AM17F
A
PT
M
50A
M
17F
–R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
1000
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 90A
17
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28
Coss
Output Capacitance
5.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
160
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 180A
280
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 180A
RG = 0.5
W
93
ns
Eon
Turn-on Switching Energy
u
4140
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5
3380
J
Eon
Turn-on Switching Energy
u
6224
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5
4052
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
180
IS
Continuous Source current
(Body diode)
Tc = 80°C
135
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 180A
1.3
V
dv/dt
Peak Diode Recovery
w
15
V/ns
Tj = 25°C
270
trr
Reverse Recovery Time
IS = -180A
VR = 250V
diS/dt = 400A/s
Tj = 125°C
540
ns
Tj = 25°C
10.4
Qrr
Reverse Recovery Charge
IS = -180A
VR = 250V
diS/dt = 400A/s
Tj = 125°C
38.4
C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
- 180A
di/dt
700A/s
VR
VDSS
Tj
150°C
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