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參數(shù)資料
| 型號： | APTM50AM24S |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 296K |
| 代理商： | APTM50AM24S |
APTM50AM24S
A
P
T
M
50A
M
24S
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
al
I
m
p
e
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
120
240
360
480
600
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,
D
ra
in
C
u
rr
e
n
t(
A
)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
420
480
012345678
VGS, Gate to Source Voltage (V)
I D
,
D
ra
in
C
u
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
60
120
180
240
300
360
ID, Drain Current (A)
R
DS
(o
n
)
D
ra
in
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 75A
0
40
80
120
160
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,D
C
Dr
a
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50AM24SC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Series & parallel diodes MOSFET Power Module |
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| APTM50AM25FTG | 功能描述:MOSFET MODULE PHASE LEG LP8 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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