參數資料
型號: APTM50DAM17
元件分類: JFETs
英文描述: 180 A, 500 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-5
文件頁數: 2/6頁
文件大?。?/td> 285K
代理商: APTM50DAM17
APTM50DAM17
A
PT
M
50D
A
M
17
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 90A
17
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28
Coss
Output Capacitance
5.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
160
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 180A
280
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 180A
RG = 0.5
W
93
ns
Eon
Turn-on Switching Energy
u
4140
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5
3380
J
Eon
Turn-on Switching Energy
u
6224
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5
4052
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
180
A
IF = 180A
1.6
1.8
IF = 360A
1.9
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
IF = 180A
VR = 400V
di/dt = 600A/s
Tj = 125°C
170
ns
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 180A
VR = 400V
di/dt = 600A/s
Tj = 125°C
2760
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
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