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參數(shù)資料
| 型號： | APTM50DSK10T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 321K |
| 代理商： | APTM50DSK10T3 |
APTM50DSK10T3
A
P
T
M
50D
SK
10T
3–
R
ev
1
D
ecem
ber
,2004
APT website – http://www.advancedpower.com
6 - 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
10
20
30
40
50
60
70
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=333V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
10
20
30
40
50
60
70
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=5
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
5
1015202530
35
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
0.4
0.8
1.2
1.6
2
10
20
30
40
50
60
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
1020304050
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=35A
TJ=125°C
L=100H
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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