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參數(shù)資料
| 型號： | APTM50H10FT3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 37 A, 500 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 309K |
| 代理商： | APTM50H10FT3G |
APTM50H10FT3G
A
www.microsemi.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001
0.0001
0.001
rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
20
40
60
80
100
120
140
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
20
I
D
, Drain Current (A)
40
60
80
R
D
(
Normalized to
V
GS
=10V @ 18.5A
0
10
20
30
40
25
50
T
C
, Case Temperature (°C)
75
100
125
150
I
D
,
DC Drain Current vs Case Temperature
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|---|---|
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