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參數(shù)資料
| 型號(hào)： | APTM50HM75FT3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 500 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 321K |
| 代理商： | APTM50HM75FT3 |
APTM50HM75FT3
A
P
T
M
50H
M
75F
T
3
–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 23A
75
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5600
Coss
Output Capacitance
1200
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
90
pF
Qg
Total gate Charge
123
Qgs
Gate – Source Charge
33
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 46A
65
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 46A
RG = 5
77
ns
Eon
Turn-on Switching Energy
755
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5
726
J
Eon
Turn-on Switching Energy
1241
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5
846
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
46
IS
Continuous Source current
(Body diode)
Tc = 80°C
34
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 46A
1.3
V
dv/dt
Peak Diode Recovery
15
V/ns
Tj = 25°C
233
trr
Reverse Recovery Time
Tj = 125°C
499
ns
Tj = 25°C
1.9
Qrr
Reverse Recovery Charge
IS = - 46A
VR = 250V
diS/dt = 100A/s
Tj = 125°C
5.7
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 46A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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