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參數(shù)資料
| 型號(hào)： | APTM50HM75SCTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full bridge Series & SiC parallel diodes MOSFET Power Module |
| 中文描述： | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 318K |
| 代理商： | APTM50HM75SCTG |
APTM50HM75SCTG
A
www.microsemi.com
7 – 8
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
10
20
30
40
50
60
70
I
D
, Drain Current (A)
t
d
d
V
DS
=333V
R
G
=5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
10
20
30
40
50
60
70
I
D
, Drain Current (A)
t
r
f
V
DS
=333V
R
G
=5
T
J
=125°C
L=100μH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
10
15
20
25
30
35
40
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2
0.4 0.6 0.8
V
SD
, Source to Drain Voltage (V)
1
1.2 1.4 1.6
1.8
I
D
,
Source to Drain Diode Forward Voltage
Switching Energy vs Current
E
on
E
off
E
off
0
0.4
0.8
1.2
1.6
2
10
20
30
40
50
60
70
I
D
, Drain Current (A)
S
V
DS
=333V
R
G
=5
T
J
=125°C
L=100μH
E
on
E
off
0
0.5
1
1.5
2
2.5
3
3.5
4
0
10
20
30
40
50
Gate Resistance (Ohms)
S
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=46A
T
J
=125°C
L=100μH
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