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參數(shù)資料
| 型號(hào)： | APTM50SKM35TG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 99 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 294K |
| 代理商： | APTM50SKM35TG |
APTM50SKM35TG
A
www.microsemi.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V,V
DS
= 500V
V
GS
= 0V,V
DS
= 400V
V
GS
= 10V, I
D
= 49.5A
V
GS
= V
DS
, I
D
= 5mA
V
GS
= ±30 V, V
DS
= 0V
Min
3
Typ
35
Max
200
1000
39
5
±150
Unit
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
14
2.8
0.2
280
Max
Unit
nF
Q
gs
Q
gd
Gate – Source Charge
80
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 99A
140
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
21
38
75
93
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 99A
R
G
= 1
ns
E
on
Turn-on Switching Energy
2070
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 99A,
R
G
= 1
1690
μJ
E
on
Turn-on Switching Energy
3112
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 99A,
R
G
= 1
2026
μJ
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
120
1.6
1.9
1.4
Max
350
600
1.8
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F
DC Forward Current
A
I
F
= 120A
I
F
= 240A
I
F
= 120A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
130
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
170
ns
440
1840
Q
rr
Reverse Recovery Charge
I
F
= 120A
V
R
= 400V
di/dt = 400A/μs
nC
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