- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378406 > APTM50SKM38TG (MICROSEMI POWER PRODUCTS GROUP) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM50SKM38TG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 90 A, 500 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 296K |
| 代理商： | APTM50SKM38TG |
APTM50SKM38TG
A
www.microsemi.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V,V
DS
= 500V
V
GS
= 0V,V
DS
= 400V
V
GS
= 10V, I
D
= 45A
V
GS
= V
DS
, I
D
= 5mA
V
GS
= ±30 V, V
DS
= 0V
Min
3
Typ
38
Max
200
1000
45
5
±150
Unit
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
11.2
2.4
0.18
246
Max
Unit
nF
Q
gs
Q
gd
Gate – Source Charge
66
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 90A
130
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
18
35
87
77
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 90A
R
G
= 2
ns
E
on
Turn-on Switching Energy
1510
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 90A,
R
G
= 2
1452
μJ
E
on
Turn-on Switching Energy
2482
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 90A,
R
G
= 2
1692
μJ
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
60
1.6
1.9
1.4
Max
250
500
1.8
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F
DC Forward Current
A
I
F
= 60 A
I
F
= 120 A
I
F
= 60 A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
130
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
170
ns
220
920
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 400V
di/dt = 200A/μs
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50TAM65FPG | 30V N-Channel PowerTrench MOSFET |
| APTM50TDUM65PG | Triple dual common source MOSFET Power Module |
| APTM50UM09FAG | Single Switch MOSFET Power Module |
| APTM50UM13SAG | Single switch Series & parallel diodes MOSFET Power Module |
| APTRG8A120 | Dual IGBT Isolated Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50TAM65FP | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple phase leg MOSFET Power Module |
| APTM50TAM65FPG | 功能描述:MOSFET MOD TRPL PHASE LEG SP6-P RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50TDUM65P | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple dual common source MOSFET Power Module |
| APTM50TDUM65PG | 功能描述:MOSFET MOD TRIPLE DUAL SRC SP6-P RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50UM09FAG | 功能描述:MOSFET N-CH 500V 497A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。