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參數(shù)資料
| 型號(hào)： | APTM50UM13SAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Single switch Series & parallel diodes MOSFET Power Module |
| 中文描述： | 335 A, 500 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 279K |
| 代理商： | APTM50UM13SAG |
APTM50UM13SAG
A
www.microsemi.com
5 – 7
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
7.5V
0
200
400
600
800
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=10&15
V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
80
160
240
320
400
480
560
640
720
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
120
240
I
D
, Drain Current (A)
360
480
600
720
R
D
(
Normalized to
V
GS
=10V @ 167.5A
0
50
100
150
200
250
300
350
25
50
T
C
, Case Temperature (°C)
75
100
125
150
I
D
,
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50UM13S-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM19S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM19SG | 功能描述:MOSFET N-CH 500V 163A J3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50UM25S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM25SG | 功能描述:MOSFET N-CH 500V 149A J3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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