
HE PhotoMOS (AQV45, AQV454H)
TYPES
* Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X”and “Z” are omitted from the seal.
High sensitivity and low
on-resistance.
DIP (1 Form B) 6-pin type.
HE PhotoMOS
(AQV45,
AQV454H)
Type
I/O isolation
Output rating*
Part No.
Packing quantity
Load
voltage
Load
current
Through hole
terminal
Surface-mount terminal
Tube packing style
Tape and reel packing style
Tube
Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
1,500 V AC
250 V
200 mA
AQV453
AQV453A
AQV453AX
AQV453AZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
400 V
150 mA
AQV454
AQV454A
AQV454AX
AQV454AZ
Reinforced
5,000 V AC
AQV454H
AQV454HA
AQV454HAX
AQV454HAZ
TESTING
(Standard type)
mm inch
8.8
.346
6.4
.252
3.9
.154
8.8
.346
6.4
.252
3.6
.142
1
2
3
6
5
4
FEATURES
1. Form B (Normally-closed) type
Has been realized thanks to the built-in
MOSFET processed by our proprietary
method, DSD (Double-diffused and
Selective Doping) method.
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.15 A load
current with a 5 mA input current. Low
ON resistance of 16 (AQV454). Stable
operation because there are no metallic
contact parts.
4. Controls various types of load such
as relays, motors, lamps and
solenoids.
5. Eliminates the need for a power
supply to drive the power MOSFET
A power supply used to drive the power
MOSFET is unnecessary because of the
built-in optoelectronic device. This results
in easy circuit design and small PC board
area.
6. Low thermal electromotive force
(Approx. 1
V) (Basic insulation)
7. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm .016 inch internal
insulation distance between inputs and
outputs. Conforms to IEC950 (reinforced
insulation).
TYPICAL APPLICATIONS
Security equipment
High-speed inspection machines
Measuring instruments
Telephone equipment
Sensors
;;
;
;;
;
;;
;
Source electrode
N–
N+
P+
N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
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