- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36744 > ARF461DG (MICROSEMI POWER PRODUCTS GROUP) POWER, FET, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | ARF461DG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | POWER, FET, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 137K |
| 代理商： | ARF461DG |
050-4933
Rev
A
6-2008
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
250V
150W
65MHz
The ARF461C and ARF461D comprise a symmetric pair of common drain RF power transistors designed for push-
pull scientic, commercial, medical and industrial RF power amplier applications up to 65 MHz. They have been
optimized for both linear and high efciency classes of operation.
Specied 250 Volt, 40.68 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efciency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefcient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
RoHS Compliant
ARF461C(G)
ARF461D(G)
Common
Drain
Microsemi Website - http://www.microsemi.com
Symbol
Parameter
ARF461CG/DG
Unit
V
DSS
Drain-Source Voltage
1000
V
DGO
Drain-Gate Voltage
1000
I
D
Continuous Drain Current @ T
C = 25°C
6.5
A
V
GS
Gate-Source Voltage
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
250
W
R
θJC
Junction to Case
0.50
°C/W
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature: 0.063” from Case for 10 Sec.
300
Symbol
Parameter
Min
Typ
Max
Unit
BV
DSS
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 μA)
1000
V
DS(ON)
On State Drain Voltage 1 (I
D(ON) = 3.25A, VGS = 10V)
6.5
I
DSS
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
25
μA
Zero Gate Voltage Drain Current (V
DS = 0.8VDSS, VGS = 0, TC = 125°C)
250
I
GSS
Gate-Source Leakage Current (V
DS = ±30V, VDS = 0V)
±100
nA
g
fs
Forward Transconductance (V
DS = 25V, ID = 3.25A)
3
4
mhos
V
GS(TH)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
3
5
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
TO
-24
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARF462A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
| ARF462B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247 |
| ARF463BP1G | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463AP1G | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF462 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF462A | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462S45 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF463 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:FAST RECOVERY DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。