- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48376 > ARF465B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | ARF465B |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | ARF465B |
050-4921
Rev
A
7-2003
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD
= 300V
P
out
= 150W
GAIN
(dB)
DYNAMIC CHARACTERISTICS
ARF465A/B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 200V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
MIN
TYP
MAX
1200
1500
80
100
30
50
715
510
21
34
12
25
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
Test Conditions
f = 40.68 MHz
V
GS
= 0V
V
DD
= 300V
Pout = 150W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 6:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
10
100
1200
10
8
6
4
2
0
01
2
3
4
567
CAPACITANCE
(pf)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10,000
5000
1000
500
100
50
10
0.1
1
10
100
300
I D
,DRAIN
CURRENT
(AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
24
10
5
1
.5
.1
1mS
10mS
DC
100uS
25
20
15
10
5
0
10
20
30
40
50
60
70
80 90
100
相關PDF資料 |
PDF描述 |
|---|---|
| ARF465B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ASI10498 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| ASI10579 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| AT-00511-TR1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-00511-TR2 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ARF465BG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 1200V 6A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465BG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466A | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF466AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:N-channel 357 W 1000 V RF MOSFET (VDMOS) 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF466BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。