參數(shù)資料
型號： ARF695S60
廠商： POSEICO SPA
英文描述： FAST RECOVERY DIODE
中文描述： 快速恢復(fù)二極管
文件頁數(shù)： 1/2頁
文件大?。?/td> 122K
代理商： ARF695S60
FAST RECOVERY DIODE
ARF695
Repetitive voltage up to
Mean forward current
Surge current
FOR IGBT,IEGT,GCT APPLICATIONS
6000
V
880
A
18
kA
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
mar 03 - ISSUE : 2
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
6000
V
V
RSM
Non-repetitive peak reverse voltage
125
6100
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
mA
V
DC LINK
Permanent DC voltage
125
3200
V
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
880
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,double side cooled
920
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
18
kA
I2 t
I2 t
1620 x1E3
A2s
V
FM
Forward voltage
Forward current = 1570
A
25
5.2
V
V
F(TO)
Threshold voltage
125
2.10
V
r
F
Forward slope resistance
125
1.55
mohm
SWITCHING
Q rr
Reverse recovery charge
I F =
VR =
1000 A
100 V
di/dt=
250 A/μs
125
μC
I rr
Peak reverse recovery current
125
A
t rr
Reverse recovery time
I F =
1000 A
μs
Q rr
Reverse recovery charge
di/dt=
500 A/μs
3000
μC
I rr
Peak reverse recovery current
VR =
V
125
1200
A
s
Softness (s-factor), min
E
OFF
Turn off energy dissipation
J
V
FR
Peak forward recovery
di/dt=
500 A/μs
125
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
14
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
3
°C/kW
T
j
Operating junction temperature
-30 / 125
°C
F
Mounting force
46.0 / 54.0
kN
Mass
1150
g
ORDERING INFORMATION : ARF695 S 60
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
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