參數(shù)資料
型號(hào): AS176-59
廠商: Alpha Industries, Inc.
英文描述: GaAs IC High Isolation Positive Control SPDT Switch DC-3.0 GHz
中文描述: 砷化鎵集成電路高隔離陽(yáng)性對(duì)照單刀雙擲開關(guān)的DC - 3.0千兆赫
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 61K
代理商: AS176-59
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 10/99A
1
GaAs IC High Isolation Positive Control
SPDT Switch DC–3.0 GHz
AS176-59
Preliminary
Features
I
Positive Voltage Control (0/+3 to +5 V)
I
High Isolation (50 dB @ 0.9, 1.9 GHz)
5
I
Low DC Power Consumption
I
Ideal for Cellular, GSM, DCS,PCS, 3G and
2.4 GHz ISM Applications
MSOP-8
Description
The AS176-59 is a GaAs FET IC SPDT switch packaged
in a MSOP-8 plastic package for low cost, high isolation
commercial applications. Ideal building block for base
station dual band applications where synthesizer isolation
is critical. Use in conjunction with the AS165-59 SPST
switch to meet GSM synthesizer isolation requirements.
Parameter
1
Condition
Frequency
2
DC–1.0 GHz
DC–2.0 GHz
DC–2.5 GHz
DC–3.0 GHz
DC–1.0 GHz
DC–2.0 GHz
DC–2.5 GHz
DC–3.0 GHz
DC–1.0 GHz
DC–2.0 GHz
DC–2.5 GHz
DC–3.0 GHz
DC–2.0 GHz
DC–3.0 GHz
Min.
Typ.
0.7
0.8
0.8
0.9
50/55
45/42
34
27
50/55
52
40
35
1.3:1
1.5:1
Max.
0.9
1.0
1.1
1.2
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Insertion Loss
3
Isolation
4
J
1
–J
2
/J
1
–J
3
J
1
–J
2
/J
1
–J
3
45/50
41/38
29
22
45/50
47
36
30
Isolation
5
J
1
–J
2
/J
1
–J
3
VSWR
6
1.5:1
1.8:1
Electrical Specifications at 25°C (0, +3 V), (0, +5 V)
0.012 (0.30 mm)
PIN 1
PIN 1
INDICATOR
+ 0.006 (0.15 mm)
- 0.002 (0.05 mm)
7.0
TYP.
0.038 (0.95 mm)
0.030 (0.75 mm)
0.017
(0.43 mm)
8.0
MAX.
0.028 (0.70 mm)
0.016 (0.40 mm)
0.007 (0.18 mm)
± 0.005 (0.12 mm)
0.006 (0.15 mm)
0.002 (0.05 mm)
0.0256 (0.65 mm) TYP.
0.118 (3.00 mm)
± 0.004 (0.1 mm)
SQ.
0.193 (4.90 mm)
REF.
Parameter
Condition
Frequency
Min.
Typ.
60
100
50
Max.
Unit
ns
ns
mV
Switching Characteristics
7
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
Two-tone Input Power +5 dBm
+3 V
+5 V
V
Low
= 0 to 0.2 V @ 20 μA Max.
V
High
= +3 V @ 100 μA Max. to +5 V @ 200 μA Max.
V
S
= V
High
± 0.2 V
Intermodulation Intercept Point (IP3)
0.5–3.0 GHz
0.5–3.0 GHz
+41
+45
dBm
dBm
Control Voltages
Operating Characteristics at 25°C (0, +5 V)
1. All measurements made in a 50
system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Pin 4: N/C.
5. Pin 4: GND.
6. Insertion loss state.
7.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
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