參數(shù)資料
型號(hào): AS179-000
英文描述: AS179-000:PHEMT GaAs IC High Linearity 3 V T/R SPD|DC-6 GHz Plastic Packaged and Chip|SPST
中文描述: AS179 - 000:PHEMT的砷化鎵集成電路高線性3室速/?社民黨|直流- 6 GHz的塑料包裝和芯片|聚苯乙烯
文件頁數(shù): 2/3頁
文件大?。?/td> 491K
代理商: AS179-000
PHEMT GaAs IC SPDT Switch DC–3 GHz
AS179-000
2
Skyworks Solutions, Inc.
[781] 376-3000
Fax
[781] 376-3100
Email
sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 2/03A
Typical Performance Data (0, +3 V)
Insertion Loss vs. Frequency
Frequency (GHz)
I
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
J
1
–J
2
J
1
–J
3
VSWR vs. Frequency
Frequency (GHz)
V
0
0.5
1.0
1.5
2.0
2.5
3.0
2.5
3.0
1.0
1.1
1.2
1.3
ILJ
2
ILJ
2
ILJ
3
ILJ
3
Isolation vs. Frequency
Frequency (GHz)
I
0
0.5
1.0
1.5
2.0
3.0
4.0
2.5
3.5
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
J
2
J
3
Characteristic
Value
RF Input Power
6 W > 500 MHz
0/+7 V Control
Control Voltage
-0.2 V, +8 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
Absolute Maximum Ratings
Parameter
Condition
Frequency
Min.
Typ.
10
20
25
+30
+34
Max.
Unit
ns
ns
mV
dBm
dBm
Switching Characteristics
1
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
0/+3 V
0/+5 V
For Two-tone Input Power +5 dBm
0/+3 V
0/+5 V
V
Low
= 0 to 0.2 V @ 20 μA Max.
V
High
= +3 V @ 100 μA Max. to +5 V @ 200 μA Max.
Input Power for 1 dB Compression
0.5–3.0 GHz
0.5–3.0 GHz
Intermodulation Intercept Point (IP3)
0.5–3.0 GHz
0.5–3.0 GHz
+43
+50
dBm
dBm
Control Voltages
Operating Characteristics at 25°C (0, +3 V)
1.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
相關(guān)PDF資料
PDF描述
AS17934 AS17934 PC-9800 Series(MS-DOS(TM))Base.IBM PC/AT(PC DOS(TM))Base | User's Manual[11/1999]
AS179-92LF APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
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