參數(shù)資料
型號： AS29F200B-120TI
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
中文描述： 128K X 16 FLASH 5V PROM, 120 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 11/20頁
文件大?。?/td> 375K
代理商： AS29F200B-120TI
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7HPSRUDU\
#
VHFWRU
#
XQSURWHFW
Parameter
V
ID
rise and fall time
RESET# setup time for temporary sector unprotect
7HPSRUDU\
#
VHFWRU
#
XQSURWHFW
#
ZDYHIRUP
#
'&
#
HOHFWULFDO
#
FKDUDFWHULVWLFV
Parameter
Input load current
A9 Input load current
Output leakage current
Output short circuit current
1
Active current, read @ 6MHz
2
Active current, program/erase
3
Standby current (TTL compatible)
Deep power down
Input low voltage
Input high voltage
Output low voltage
9
&&
#
#813
±
318
9
Max
±1
90
±1
200
40
60
400
1
0.8
V
CC
+ 0.3
0.45
-
-
4.2
12.5
1
Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second.
OUT
= 0.5V was selected to avoid test problems
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency component typically
is less than 2 mA/MHz with OE at V
IH
.
I
CC
active while program or erase operations are in progress.
2
3
.H\
#
WR
#
VZLWFKLQJ
#
ZDYHIRUPV
Rising input
Symbol
t
VIDR
t
RSP
All speeds
500 (min)
4 (min)
Unit
ns
μs
Symbol
I
LI
I
LIT
I
LO
I
OS
I
CC
I
CC2
I
SB1
I
SB2
V
IL
V
IH
V
OL
V
OH1
V
OH2
V
LKO
V
h
Test conditions
V
IN
= V
SS
to V
CC
, V
CC
= V
CCMAX
V
CC
= V
CCMAX
, A9 = 12.5V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CCMAX
V
OUT
= 0.5V
CE = V
IL
, OE = V
IH
CE = V
IL
, OE = V
IH
CE = OE = V
IH
, V
CC
= V
CCMAX
RP = 0V
Min
-
Unit
μA
μA
μA
mA
mA
mA
μA
μA
V
V
V
V
V
V
V
-
-
-
-
-
-
-0.5
2.0
-
2.4
V
CC
- 0.4
2.8
11.5
I
OL
= 5.8mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
I
OH
= -100 μA, V
CC
= V
CC MIN
Output high level
Low V
CC
lock out voltage
Input HV select voltage
RESET
CE
WE
RY/BY
t
RSP
t
VIDR
t
VIDR
Program/erase command sequence
0 or 1.8V
10V
Undefined output/don’t care
Falling input
相關PDF資料
PDF描述
AS29F200B-55SC 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-55SI 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-55TC 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-55TI 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-70SC 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
相關代理商/技術參數(shù)
參數(shù)描述
AS29F200B-55SC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-55SI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-55TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-55TI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200B-70SC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
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