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參數(shù)資料
| 型號： | AS29F200B-90SC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封裝： | 0.600 INCH, SO-44 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 375K |
| 代理商： | AS29F200B-90SC |
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Byte/word
Programming
Programming the AS29F200 is a four bus cycle operation performed on a byte-by-byte or word-
by-word basis. Two unlock write cycles precede the Program Setup command and program data
write cycle. Upon execution of the program command, no additional CPU controls or timings are
necessary. Addresses are latched on the falling edge of CE or WE (whichever is last); data is latched
on the rising edge of CE or WE, (whichever is first). The AS29F200’s automated on-chip program
algorithm provides adequate internally-generated programming pulses and verifies the
programmed cell margin.
Check programming status by sampling data on the DATA polling (DQ7), toggle bit (DQ6), or RY/
BY pin. The AS29F200 returns the equivalent data that was written to it (as opposed to
complemented data), to complete the programming operation.
The AS29F200 ignores commands written during programmng. A hardware reset occurring
during programming may corrupt the data at the programmed location.
AS29F200 allows programming in any sequence, across any sector boundary. Changing data from 0
to 1 requires an erase operation. Attempting to program data 0 to 1 results in DQ5 = 1 (exceeded
programming time limits); reading this data after a Read/reset operation returns a 0. When
programming time limit is exceeded, DQ5 reads high, and DQ6 continues to toggle. In this state, a
reset command returns the device to read mode.
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional
unlock write cycles; and finally the Chip Erase command.
Chip Erase
Chip erase does not require logical 0s written prior to erasure. When the automated on-chip erase
algorithm is invoked with the Chip Erase command sequence, AS29F200 automatically programs
and verifies the entire memory array for an all-zero pattern prior to erase. The AS29F200 returns to
read mode upon completion of chip erase unless DQ5 is set high as a result of exceeding time
limit.
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional
unlock write cycles, and finally the Sector Erase command. Determine the sector to be erased by
addressing any location in the sector. This address is latched on the falling edge of WE; the
command, 30H is latched on the rising edge of WE. The sector erase operation begins after a 80 μs
time-out.
Sector Erase
To erase multiple sectors, write the sector erase command to each of the addresses of sectors to
erase after following the six bus cycle operation above. Timing between writes of additional sectors
must be <80 μs, or the AS29F200 ignores the command and erasure begins. During the
time-out period any falling edge of WE resets the time-out. Any command (other than Sector Erase
or Erase Suspend) during time-out resets the AS29F200 to read mode, and the device ignores the
sector erase command string. Erase such ignored sectors by restarting the Sector Erase command on
the ignored sectors.
The entire array need not be written with 0s prior to erasure. AS29F200 writes 0s to the entire
sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected
sectors unaffected. AS29F200 requires no CPU control or timing signals during sector erase
operations.
Automatic sector erase begins after erase time-out from the last rising edge of WE from the sector
erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling address
must be performed on addresses that fall within the sectors being erased. AS29F200 returns to read
mode after sector erase unless DQ5 is set high by exceeding the time limit.
Item
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F200B-90SI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-90TC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-90TI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-120SC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-120SI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F200B-90SI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-90TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200B-90TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-120SC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-120SI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
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