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參數(shù)資料
| 型號(hào)： | AS4C4M4 |
| 英文描述： | 16384Kbits 4M x 4 Replacement with DSCC 5962-n/a | DRAM |
| 中文描述： | 16384Kbits 4米× 4置換籍局5962氮/ 1 |內(nèi)存 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大?。?/td> | 986K |
| 代理商： | AS4C4M4 |
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16 Me
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
AS4C4M4
Rev. 1.0 5/03
AVAILABLE AS MILITARY
SPECIFICATIONS
MIL-STD-883
FEATURES
Fast Page Mode Operation
CAS\-before-RAS\ Refresh Capability
RAS\-only and Hidden Refresh Capability
Self-refresh Capability
Fast Parallel Test Mode Capability
TTL Compatible Inputs and Outputs
Early Write or Output Enable Controlled Write
JEDEC Standard Pinout
Single +5V (±10%) Power Supply
OPTIONS
Timing
60nsaccess
70nsaccess
MARKINGS
-6
-7
Package
Plastic TSOP, 24-pin
DG
Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
Industrial (-40
o
C to +85
o
C)
XT
IT
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS4C4M4DG is a
4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering
high speed random access of memory cells within the same
row. This device features a +5V (±10%) power supply,
refresh cycle (2K), and fast access times (60 and 70ns). Other
features include CAS\-before-RAS\, RAS\-only refresh, and
Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM
is fabricated using an advanced CMOS process to realize high
bandwidth, low power consumption and high reliability. It may
be used as main memory for high level computers,
microcomputers and personal computers.
PIN ASSIGNMENT
(Top View)
24 Pin TSOP (DG)
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vss
DQ3
DQ2
CAS\
OE\
A9
A8
A7
A6
A5
A4
Vss
Vcc
DQ0
DQ1
W\
RAS\
NC
A10
A0
A1
A2
A3
Vcc
PIN
FUNCTION
Address Inputs
A0 - A10
DQ0 -DQ3
Data In/Out
V
SS
RAS\
Ground
Row Address Strobe
CAS\
Column Address Strobe
W\
Read/Write Input
OE\
Data Output Enable
V
CC
NC
Power (+5V)
No Connect
PIN ASSIGNMENT
For more products and information
please visit our web site at
www.austinsemiconductor.com
PERFORMANCE RANGE
SPEED
t
RAC
-6
60
-7
70
t
CAC
15
18
t
RC
110
130
t
PC
40
45
UNITS
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4C4M4E0-70JC | x4 EDO Page Mode DRAM |
| AS4C4M4E1-50JC | x4 EDO Page Mode DRAM |
| AS4C4M4E1-50JI | x4 EDO Page Mode DRAM |
| AS4C4M4E1-50TC | x4 EDO Page Mode DRAM |
| AS4C4M4E1-50TI | x4 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C4M4DG-6/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT |
| AS4C4M4DG-6/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT |
| AS4C4M4DG-7/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT |
| AS4C4M4DG-7/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT |
| AS4C4M4E0-70JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
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