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參數(shù)資料
| 型號(hào)： | AS5C4008DJECJ-20 |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 136K |
| 代理商： | AS5C4008DJECJ-20 |
S R A M
AS5C4009
Austin Semiconductor, Inc.
AS5C4009
Rev. 5.0 6/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
AVAILABLE AS MILITARY
SPECIFICATION
SMD 5962-95613
1,2
MIL STD-883
1
FEATURES
Ultra Low Power with 2V Data Retention
(0.2mW MAX worst case Power-down standby)
Fully Static, No Clocks
Single +5V ±10% power supply
Easy memory expansion with CE\ and OE\ options
All inputs and outputs are TTL-compatible
Three state outputs
Operating temperature range:
Ceramic -55
o
C to +125
o
C & -40
o
C to +85
o
C
Plastic -40
o
C to +85
o
C
3
1. Not applicable to plastic package
2. Applies to CW package only.
3. Contact factory for -55
o
C to +125
o
C
OPTIONS
Timing
55ns access
70ns access
85ns access
100ns access
Packages
Ceramic Dip (600 mil)
Ceramic SOJ
5
Plastic TSOP
Options
2V data retention/very low power L
MARKING
-55
4
-70
-85
-100
CW
ECJ
DG
No. 112
No. 502
No. 1002
PIN ASSIGNMENT
(Top View)
32-Pin DIP, 32-Pin SOJ
& 32-Pin TSOP
4. For DG package, contact factory
5. Contact Factory
NOTE:
Not all combinations of operating temperature, speed, data retention and low power are
necessarily available. Please contact the factory for availability of specific part number
combinations.
Pin Name
WE\
Write Enable Input
CE\
Chip Select Input
OE\
Output Enable Input
A0 - A18
Address Inputs
I/O1 - I/O8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
512K x 8 SRAM
Ultra Low Power SRAM
For more products and information
please visit our web site at
www.austinsemiconductor.com
GENERAL DESCRIPTION
The AS5C4009 is organized as 524,288 x 8 SRAM utilizing a
special ultra low power design process. ASI’s pinout adheres to the
JEDEC standard for pinout on 4 megabit SRAMs. The evolutionary 32
pin version allows for easy upgrades from the 1 meg SRAM design.
For flexibility in memory applications, ASI offers chip enable (CE\)
and output enable (OE\) capabilities. These features can place the
outputs in High-Z for additional flexibility in system design.
This devices operates from a single +5V power supply and all
inputs and outputs are fully TTL-compatible.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW. The device offers a re-
duced power standby mode when disabled, by lowering VCC to 2V and
maintaining
CE\ = 2V. This allows system designers to meet ultra low
standby power requirements.
Function
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/01
I/02
I/03
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/08
I/07
I/06
I/05
I/04
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS5C512K8DJECJ-12 | x8 SRAM |
| AS5C512K8DJECJ-15 | x8 SRAM |
| AS5C512K8DJECJ-17 | x8 SRAM |
| AS5C512K8DJECJ-20 | x8 SRAM |
| AS5SS128K36DQ-11XT | x36 Fast Synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5C4008EC-12/883C | 制造商:Micross Components, Inc. 功能描述:SRAM, 4MB - Trays |
| AS5C4008EC-12/H | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM SRAM MEMORY ARRAY |
| AS5C4008EC-12/IT | 制造商:Micross Components 功能描述:SRAM, 4MB - Trays |
| AS5C4008EC-12/LH | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM SRAM MEMORY ARRAY |
| AS5C4008EC-12L | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM SRAM MEMORY ARRAY |
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